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12.34 · Jilin University+ 3Show
more authorsAbstractIn this work, a lithium-ion sulfur battery has been constructed by employing the sulfurized polyacrylonitrile (S@pPAN) cathode, prelithiated SiOx/C anode and commercial carbonate-based electrolyte. Compared with the traditional lithium-sulfur battery, the replacement of lithium metal with prelithiated SiOx/C anode and the use of commercial carbonate-based electrolyte ensure the high safety of the new battery. Meanwhile, the lithium-ion sulfur battery also possesses the advantage of high energy density. It delivers a high reversible capacity of 616 mA h g?? after 100 cycles with an average working voltage of about 1.6 V, corresponding to a high energy density of 661 W h kg??, which is more than double that of the commercial lithium-ion batteries. The fabrication of the lithium-ion sulfur battery provides an effective way to solve the safety problems of the available lithium-sulfur batteries.Do you want to read the rest of this article?
CitationsCitations0ReferencesReferences33ABSTRACT: The development of lithium-sulfur is impeded by two main obstacles: the dissolution of lithium polysulfides and the pristine insulation of sulfur. Here, high energy ball-milling with the assistance of dielectric barrier discharge plasma was used in synthesis of ultrafine sulfur particles anchored on in situ exfoliated graphene for Li-S batteries. The ultrafine sulfur particles formed not only afford more sufficient electrical contact towards graphene support, but also alleviate volume expansion compared with bulk sulfur. On the other hand, with robust etching function of dielectric barrier discharge plasma, little oxygen-doping was observed in exfoliated few-layer graphene, offering sufficient capture sites towards lithium polysulfides. The ultrafine sulfur/graphene composite with little oxygen-doping exhibits superior cycling performance and rate capability in contrast to the control samples without the exertion of dielectric barrier discharge plasma. Little capacity degradation rate of 0.07% per cycle was achieved at 0.5C over 500 cycles.Article · Jan 2017 · The Journal of Physical Chemistry C+1 more author...ABSTRACT: Biomass walnut shell was used to prepare activated carbon (AC) through a carbonization treatment and an activation procedure with potassium hydroxide (KOH). AC showed hierarchical pores: 0.6 nm micropores, 2.7 nm mesopores and macropores with average diameter of 50 nm, providing a large specific surface area of 2318 m? g??. This highly porous AC was tested as a host material to encapsulate sulfur via a vapor phase infusion process. The developed AC-S electrode showed a high initial specific capacity of 1350 mAh g?? and good capacity retention over 100 cycles at 0.1 C for lithium–sulfur battery.Article · May 2017 +1 more author...ABSTRACT: Commercialized conductive slurry consisting of polyacrylamide (PAM) and two kinds of carbon black was coated on the surface of sulfur cathode. The hybrid PAM/C coating not only physically blocks but also chemically anchors polysulfides within the cathode, confining their out-diffusion and shuttle. Besides, the flexible and highly-conductive coating layer buffers volume change of the cathode during discharge-charge process and reduces charge transfer resistance. A specific capacity of as high as ~900 mAh g?? after 300 cycles is demonstrated for the PAM/C coated cathode, which is a significant improvement of reversible capacity and cycle capability compared to uncoated or conventional PVDF/C coated cathode.Article · May 2017 · The Journal of Physical Chemistry C+1 more author...ABSTRACT: Here, we demonstrate a strategy to produce high areal loading and areal capacity sulfur cathodes by using vapor phase infiltration of low-density carbon nanotube (CNT) foams pre-formed by solution processing and freeze drying. Vapor phase capillary infiltration of sulfur into pre-formed and binder-free low-density CNT foams leads to mass loading of ~ 79 wt.% arising from interior filling and coating of CNTs with sulfur while preserving conductive CNT-CNT junctions that sustains electrical accessibility through the thick foam. Sulfur cathodes are then produced by mechanically compressing these foams into dense composites (ρ & 0.2 g/cm3), revealing specific capacity of 1039 mAh/gS at 0.1 C, high sulfur areal loading of 19.1 mg/cm2, and high areal capacity of 19.3 mAh/cm2. This work highlights a technique broadly adaptable to a diverse group of nanostructured building blocks where pre-formed low-density materials can be vapor infiltrated with sulfur, mechanically compressed, and exhibit simultaneous high areal and gravimetric storage properties. This provides a route for scalable, low-cost, and high energy density sulfur cathodes based on conventional solid electrode processing routes.Article · Apr 2017 +1 more author...ABSTRACT: Flexible polymers show high potential applications in rechargeable lithium-sulfur (Li-S) batteries for their capability of confining sulfur diffusion and tolerance to large volume expansion during lithiation. Herein, sulfur is copolymerized with 3-butylthiophene via radical polymerization by heating the mixture of both components at controlled temperatures. Further capping of the thus-synthesized copolymer CP(S3BT) with highly conductive PEDOT:PSS thin film substantially enhances the electrical conductivity. With the resulting polymer hybrids as the cathode material, a Li-S battery is constructed which shows an initial discharge capacity of 1362 mAhg-1 at 0.1C and a reversible capacity of 631 mAhg-1 even at 5C. Moreover, the polymer cathode exhibits a high capacity of 682 mAhg-1 after 500 charge-discharge cycles at 1C with 99.947% retention per cycle. The remarkable performance is attributed to the synergetic effects of (i) high conductivity resulting from both the conducting blocks of poly(3-butylthiophene) (P3BT) and PEDOT:PSS (ii) physical confinement of polysulfides by P3BT segments and PEDOT:PSS and (iii) chemical confinement resulting from the high density of chemical bonds between sulfur and 3-butylthiophene. The results may offer a new paradigm in the development of efficient and stable polymer cathodes for high performance Li-S battery. Full-text · Article · Jan 2017 +1 more author...ABSTRACT: Lithium-sulfur battery has received extensive attention because of its high energy density, but its practical application has been limited by several problems such as short cycle life and low efficiency. In this study, we prepare monodispersed sulfur nanoparticles (S NPs) on partially reduced graphene oxide (S-prGO) during reduction of graphene oxide by spray method. The S-prGO composite is then recombined with polydopamine (PDA) to get the S-prGO-PDA composite. The S-prGO-PDA composite exhibits great cycling stability, coulombic efficiency and capacity retention. When charge-discharge at current density of 200 mA g??, the specific capacity is 1122 mAh g?? at the first discharge and 647 mAh g?? after 100 cycles, with stable coulombic efficiency of 98%. Full-text · Article · Nov 2016 · The Journal of Physical Chemistry C+1 more author...Project[...]ArticleAugust 2015In this work, a novel Si/nitrogen-rich porous C composite was prepared by the simple co-assembly of gelatin, nano-CaCO3 particles and Si nanoparticles, followed by a pyrolysis process and a subsequent acid washing treatment to remove the template. The Si nanoparticles were adhering to the nitrogen-rich porous carbon framework, which possesses good conductivity and adequate free space to... ArticleJune 2016 · Journal of Power Sources · Impact Factor: 6.22In this work, a novel core-shell structured SiOx/nitrogen-doped carbon composite has been prepared by simply dispersing the SiOx particles, which are synthesized by a thermal evaporation method from an equimolar mixture of Si and SiO2, into the dopamine solution, followed by a carbonization process. The SiOx core is well covered by the conformal and homogeneous nitrogen-doped carbon layer from... ArticleAugust 2017ArticleOctober 2014A series of pore-containing silicon/nitrogen-rich carbon composites are successfully synthesized via a simple method by using the waste contact mass of organosilane industry as the pore-containing silicon source, followed by acid washing to remove the impurities and ball milling to obtain the silicon particles with appropriate particle size. The gelatin is employed as the carbon precursor to... Data provided are for informational purposes only. Although carefully collected, accuracy cannot be guaranteed. Publisher conditions are provided by RoMEO. Differing provisions from the publisher's actual policy or licence agreement may be applicable.This publication is from a journal that may support self archiving.Last Updated: 18 Jul 17Cold dust emission from X-ray AGN in the SCUBA-2 Cosmology Legacy Survey :
dependence on luminosity, obscuration & AGN activity - University of Hertfordshire Research Archive
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Cold dust emission from X-ray AGN in the SCUBA-2 Cosmology Legacy Survey :
dependence on luminosity, obscuration & AGN activity
Banerji, Manda; McMahon, R.G.; Willott, C.J.; Geach, James; Harrison, C. M.; Alaghband-Zadeh, S.; Alexander, D. M.; Bourne, N.; Coppin, Kristen; Dunlop, J. S.; Farrah, D.; Jarvis, M.; Michalowski, M. J.; Page, M.; Smith, Daniel; Swinbank, A.M.; Symeonidis, M.; van der Werf, P. P.
Citation: Banerji , M , McMahon , R G , Willott , C J , Geach , J , Harrison , C M , Alaghband-Zadeh , S , Alexander , D M , Bourne , N , Coppin , K , Dunlop , J S , Farrah , D , Jarvis , M , Michalowski , M J , Page , M , Smith , D , Swinbank , A M , Symeonidis , M & van der Werf , P P 2015 , ' Cold dust emission from X-ray AGN in the SCUBA-2 Cosmology Legacy Survey : dependence on luminosity, obscuration & AGN activity ' Monthly Notices of the Royal Astronomical Society , vol 454 , no. 1 , pp. 419-438 . DOI: 10.1093/mnras/stv1881
We study the 850um emission in X-ray selected AGN in the 2 sq-deg COSMOS field using new data from the SCUBA-2 Cosmology Legacy Survey. We find 19 850um bright X-ray AGN in a high-sensitivity region covering 0.89 sq-deg with flux densities of S850=4-10 mJy. The 19 AGN span the full range in redshift and hard X-ray luminosity covered by the sample - 0.7z43.2 1 X-ray AGN - S850=0.71+/-0.08mJy. We explore trends in the stacked 850um flux densities with redshift, finding no evolution in the average cold dust emission over the redshift range probed. For Type 1 AGN, there is no significant correlation between the stacked 850um flux and hard X-ray luminosity. However, in Type 2 AGN the stacked submm flux is a factor of 2 higher at high luminosities. When averaging over all X-ray luminosities, no significant differences are found in the stacked submm fluxes of Type 1 and Type 2 AGN as well as AGN separated on the basis of X-ray hardness ratios and optical-to-infrared colours. However, at log10(LX) &44.4, dependences in average submm flux on the optical-to-infrared colours become more pronounced. We argue that these high luminosity AGN represent a transition from a secular to a merger-driven evolutionary phase where the star formation rates and accretion luminosities are more tightly coupled. Stacked AGN 850um fluxes are compared to the stacked fluxes of a mass-matched sample of K-band selected non-AGN galaxies. We find that at 10.5 M0)
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+ 347.52 · Chungnam National University38.33 · North Carolina State UniversityShow
more authorsAbstractRealization of high‐quality inverted interfaces has been thwarted by mutually competing surface kinetic requirements. We report a way out of this dilemma based upon reflection high‐energy diffraction (RHEED) studies of GaAs/AlxGa1-x As(100) system. Liquid nitrogen mobilities comparable to good GaAs/Al0.3Ga0.7As normal heterojunctions at carrier concentrations ~5×1011/cm2 have been realized in inverted heterojunctions grown on the basis of RHEED suggested conditions and procedures.Do you want to read the rest of this article?
CitationsCitations5ReferencesReferences17ABSTRACT: The thin strained superlattice (TSSL) concept is introduced as a means for extending the practical range of application for pseudomorphic In x Ga 1-x As on GaAs. Growth and characterization results are presented for pseudomorphic high electron mobility transistor structures with GaAs‐In 0.3 Ga 0.7 As TSSL active layers grown by molecular beam epitaxy. The TSSLs are composed of three periods of GaAs(15 ?)‐ In 0.3 Ga 0.7 As(h 2 ), where h 2 ranges from 30 to 52 ?. Modulation doping of the TSSLs is provided by atomic planar‐doped Al 0.3 Ga 0.7 As overlayers with 45 ? undoped spacers. 77 K Hall effect and transmission electron microscopy reveal that relatively thick TSSLs can be grown with high electronic and structural quality, comparable to much thinner In 0.3 Ga 0.7 As single quantum wells. Results are compared with a model for critical layer thickness and discussed in light of in situ reflection high‐energy electron diffraction measurements.Article · Jun 1989 +1 more author...ABSTRACT: Periodic interruption of Ga flux during MBE growth of GaAs has been used to achieve sustained two-dimensional layer-by-layer growth. RHEED intensity oscillation for extended growth shows no degradation in the oscillation amplitude, indicating an atomically smooth growth front throughout the growth.Article · Dec 1989 Chapter · Jan 1990 · Nippon Hinyōkika Gakkai zasshi. The japanese journal of urologyABSTRACT: We report the first realization of extremely low free‐carrier concentration (≤4×10&sup&1&/sup&&sup&0&/sup& cm&sup&-&/sup&&sup&2&/sup&) and high LN 2 electron mobilities (~1.8×10&sup&5&/sup& cm&sup&2&/sup&/V s) in the dark in inverted Al 0.3 Ga 0.7 As /GaAs(100) modulation‐doped structures. The obtained results are all the more remarkable since the structures do not involve any superlattice or graded barrier, δ doping, or large spacer layer thicknesses. We attribute the observed properties to the high quality of the ambient in the molecular beam epitaxy system and the use of optimized growth kinetics and procedure as determined from reflection high‐energy electron diffraction intensity behavior.Article · Jun 1990 Article · Jul 2010 ArticleJuly 1988 · Applied Physics Letters · Impact Factor: 3.30We report reproducible realization of GaAs/Al 0.25 Ga 0.75 As(100) inverted heterojunctions with liquid‐
itrogen electron mobilities in excess of 10&sup&5&/sup& cm&sup&2&/sup& /(V s). This is made possible through use of reflection high‐energy electron‐diffraction (RHEED) intensity dynamics determined optimized growth conditions, but without the use of short‐period superlattices as buffers or... ArticleJanuary 1988 · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures · Impact Factor: 1.36Systematic and reproducible realization of LN2 mobilities in I-HEMT structures in excess of 10 to the 5th sq cm/V s is reported. This has been made possible through growth and dopant diffusion kinetics optimization procedures revealed in earlier reflection high-energy diffraction (RHEED) studies of GaAs/Al(x)Ga(1-x)As(100) system and computer simulation studies of MBE growth. Further... ArticleMay 1986 · Applied Physics Letters · Impact Factor: 3.30We report on comparative photoluminescence (PL) studies of GaAs/Al 0.33 Ga 0.67 As single quantum well structures grown via molecular beam epitaxy under identical growth conditions employing (a) customary practice of no growth interruption and (b) growth interruption. The growth conditions themselves are chosen to be near optimum, as determined from the growth kinetics exemplified by the... ArticleJuly 1987 · Applied Physics Letters · Impact Factor: 3.30Results on the specular beam intensity behavior in reflection high‐energy electron diffraciton during molecular beam epitaxial growth of Al 0.3 Ga 0.7 As on GaAs(100) are reported. The behavior of steady‐state intensity as a function of substrate temperature exhibits irreversible character. The results indicate that the Al reactivity with As and residual impurities is the dominant factor... Data provided are for informational purposes only. Although carefully collected, accuracy cannot be guaranteed. Publisher conditions are provided by RoMEO. Differing provisions from the publisher's actual policy or licence agreement may be applicable.This publication is from a journal that may support self archiving.Integrative analyses of splicing in the aging brain: role in susceptibility to Alzheimer's Disease | bioRxiv
doi: https://doi.org/10.
Towfique Raj
Icahn School of Medicine at Mount S
Stanford U
Garrett Wong
Icahn School of Medicine at Mount S
Satesh Ramdhani
Icahn School of Medicine at Mount S
Ying-chih Wang
Icahn School of Medicine at Mount S
Bernard Ng
University of British C
Minghui Wang
Icahn School of Medicine at Mount S
Ishaan Gupta
Icahn School of Medicine at Mount S
Vahram Haroutunian
Icahn School of Medicine at Mount S
Icahn School of Medicine at Mount S
Eric E. Schadt
Icahn School of Medicine at Mount S
Tracy Young-Pearse
Brigham and Women's H
Sara Mostafavi
University of British C
Pamela Sklar
Icahn School of Medicine at Mount S
David Bennett
Rush University Medical C
Philip L. De Jager
Columbia University Medical Center
AbstractWe use deep sequencing to identify sources of variation in mRNA splicing in the dorsolateral prefrontal cortex (DLFPC) of 450 subjects from two prospective cohort studies of aging. Hundreds of aberrant pre-mRNA splicing events are reproducibly associated with Alzheimer's Disease (AD). We also generate a catalog of splicing quantitative trait loci (sQTL) effects in the human cortex: splicing of 3,198 genes is influenced by genetic variation. sQTLs are enriched among those variants influencing DNA methylation and histone acetylation. In assessing known AD loci, we report that altered splicing is the mechanism for the effects of the PICALM, CLU, and PTK2B susceptibility alleles. Further, we leverage our sQTL catalog to identify genes whose aberrant splicing is associated with AD and mediated by genetics. This transcriptome-wide association study identified 21 genes with significant associations, many of which are found in AD GWAS loci, but 8 are in novel AD loci, including FUS, which is a known amyotrophic lateral sclerosis (ALS) gene. This highlights an intriguing shared genetic architecture that is further elaborated by the convergence of old and new AD genes in autophagy-lysosomal-related pathways already implicated in AD and other neurodegenerative diseases. Overall, this study of the aging brain's transcriptome provides evidence that dysregulation of mRNA splicing is a feature of AD and is, in some genetically-driven cases, causal.
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Towfique Raj, Yang Li, Garrett Wong, Satesh Ramdhani, Ying-chih Wang, Bernard Ng, Minghui Wang, Ishaan Gupta, Vahram Haroutunian, Bin Zhang, Eric E. Schadt, Tracy Young-Pearse, Sara Mostafavi, Pamela Sklar, David Bennett, Philip L. De Jager
bioRxiv 174565; doi: https://doi.org/10.
Towfique Raj, Yang Li, Garrett Wong, Satesh Ramdhani, Ying-chih Wang, Bernard Ng, Minghui Wang, Ishaan Gupta, Vahram Haroutunian, Bin Zhang, Eric E. Schadt, Tracy Young-Pearse, Sara Mostafavi, Pamela Sklar, David Bennett, Philip L. De Jager
bioRxiv 174565; doi: https://doi.org/10.
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